APT65GP60B2G IGBT Power Module Transistors IGBTs Single
仕様
部品番号:
APT65GP60B2G
製造業者:
Microsemi Corporation
記述:
IGBT 600V 100A 833W TMAX
部門:
単一トランジスター- IGBTs -
家族:
単一トランジスター- IGBTs -
シリーズ:
力MOS 7®
紹介
APT65GP60B2G Specifications
Part Status | Not For New Designs |
---|---|
IGBT Type | PT |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 100A |
Current - Collector Pulsed (Icm) | 250A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 65A |
Power - Max | 833W |
Switching Energy | 605µJ (on), 896µJ (off) |
Input Type | Standard |
Gate Charge | 210nC |
Td (on/off) @ 25°C | 30ns/91ns |
Test Condition | 400V, 65A, 5 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 Variant |
Supplier Device Package | - |
Shipment | UPS/EMS/DHL/FedEx Express. |
Condtion | New original factory. |
APT65GP60B2G Packaging
Detection
RFQを送りなさい
ストック:
MOQ:
Negotiable